Substrate processing apparatus and gas pressure control method used therein
AssigneeHPSP Co., Ltd.
InventorJohn Christopher Garrett
Life of this patent
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Abstract
A substrate processing apparatus and a gas pressure control method used therein are disclosed. The substrate processing apparatus may include a process chamber, a load-lock chamber, and an exhaust module. The process chamber may accommodate a boat for loading a substrate. The load-lock chamber may be formed to accommodate the boat moved from the process chamber. The exhaust module may include a main exhaust line connected to the load-lock chamber to exhaust a load-lock gas present in the load-lock chamber, and a sub-exhaust line connected to the load-lock chamber and configured to exhaust the load-lock gas at a lower flow rate than the main exhaust line.
Claims12
A substrate processing apparatus comprising:
- a process chamber accommodating a boat for loading a substrate;
- a load-lock chamber configured to accommodate a boat moved from the process chamber;
- and
- an exhaust module having a main exhaust line connected to the load-lock chamber to exhaust a load-lock gas present in the load-lock chamber, and a sub-exhaust line connected to the load-lock chamber and configured to exhaust the load-lock gas at a lower flow rate than the main exhaust line.
A gas pressure control method in a substrate processing apparatus, comprising:
- controlling, to control a pressure of a load-lock gas present in a load-lock chamber accommodating a boat moved from a process chamber, an opening degree of a main flow control valve installed in a main exhaust line connected to the load-lock chamber;
- and
- allowing the load-lock gas to be exhausted at a lower flow rate than the main exhaust line through a sub-exhaust line connected to the load-lock chamber during the adjustment of the opening degree of the main flow control valve.
Dependencies are inferred from the claim text.