Method for manufacturing semiconductor substrate and film forming composition
AssigneeJsr Corporation
InventorsHironori KIMATA, Ryuichi SERIZAWA, Yuki OZAKI
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Abstract
A method for manufacturing a semiconductor substrate includes applying a composition for film formation to a substrate. The composition for film formation includes: a metal compound including a metal atom and an organic acid, and a solvent. The organic acid is represented by formula (1). R1 is a hydroxy group, a nitro group, a halogen atom, or a monovalent organic group having 1 to 20 carbon atoms; Ar1 is an r+s+t-valent aromatic ring structure having 3 to 30 carbon atoms; X is a crosslinkable group; L1 is a single bond or a divalent linking group; t is an integer of 0 to 2; r is an integer of 1 to 4; and s is an integer of 1 to 4.
Claims16
A method for manufacturing a semiconductor substrate, the method comprising:
- applying a composition for film formation to a substrate,
- wherein the composition for film formation comprises:
- a metal compound comprising a metal atom and an organic acid, and
- a solvent, and
- the organic acid is represented by formula (1):
- wherein in the formula (1),
- R1 is a hydroxy group, a nitro group, a halogen atom, or a monovalent organic group having 1 to 20 carbon atoms, provided that the monovalent organic group is different from a structure corresponding to -L1-COOH and a structure corresponding to X in the formula (1);
- Ar1 is an r+s+t-valent aromatic ring structure having 3 to 30 carbon atoms;
- X is a crosslinkable group;
- L1 is a single bond or a divalent linking group;
- t is an integer of 0 to 2, when t is 2, two R1s are identical to or different from each other;
- r is an integer of 1 to 4, when r is 2 or more, a plurality of Xs are identical to or different from each other;
- and
- s is an integer of 1 to 4, and when s is 2 or more, a plurality of L1s are identical to or different from each other.
A film forming composition comprising:
- a metal compound comprising a metal atom and an organic acid;
- and
- a solvent,
- wherein the organic acid is represented by formula (1):
- wherein in the formula (1),
- R1 is a hydroxy group, a nitro group, a halogen atom, or a monovalent organic group having 1 to 20 carbon atoms, provided that the monovalent organic group is different from a structure corresponding to -L1-COOH and a structure corresponding to X in the formula (1);
- Ar1 is an r+s+t-valent aromatic ring structure having 3 to 30 carbon atoms;
- X is a crosslinkable group;
- L1 is a single bond or a divalent linking group;
- t is an integer of 0 to 2, when t is 2, two R1s are identical to or different from each other;
- r is an integer of 1 to 4, when r is 2 or more, a plurality of Xs are identical to or different from each other;
- and
- s is an integer of 1 to 4, and when s is 2 or more, a plurality of L1s are identical to or different from each other.
Dependencies are inferred from the claim text.