Cmos technology using nmos transistor with oxide channel and pmos transistor with non-oxide channel

An electronic device, comprising:

• a plurality of transistors, wherein the respective transistors comprise a channel, wherein:
• the channel of at least one of the transistors is an n-type channel, wherein the n-type channel comprises an oxide semiconductor;
• and
• the channel of at least one of the transistors is a p-type channel, wherein the p-type channel comprises a group IV semiconductor or a group III-V semiconductor.

A system, comprising:

• complementary metal-oxide-semiconductor (CMOS) circuitry, wherein the CMOS circuitry comprises:
• one or more n-type transistors, wherein the respective n-type transistors comprise an oxide semiconductor channel;
• and
• one or more p-type transistors, wherein the respective p-type transistors comprise a non-oxide semiconductor channel;
• and
• an interconnect, wherein the n-type transistors and the p-type transistors are electrically coupled via the interconnect.