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US 2026/0181968 A1Published application
Logic devices comprising perpendicular magnetic anisotropy ferromagnet materials
AssigneeIntel Corporation
InventorsPunyashloka Debashis, Mahendra DC, John J. Plombon, Hai Li, Yu-Ching Liao, Jennifer Lux, Carly Rogan, Dominique A. Adams, Scott B. Clendenning, Ian Alexander Young
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Abstract
In embodiments of the present disclosure, logic devices include magnetically coupled and electrically isolated perpendicular magnetic anisotropy (PMA) ferromagnet (FM) material layers. The logic devices may be read based on the anomalous Hall effect (AHE).
Claims20
A transistor device comprising:
- a magnetoelectric (ME) material layer;
- a first ferromagnetic (FM) material layer on the ME material layer;
- a dielectric layer on the first FM material layer;
- and
- a second FM material layer on the dielectric layer;
- wherein the first FM material layer and the second FM material layer each comprise a perpendicular magnetic anisotropy (PMA) ferromagnet material.
3 more elements
A transistor device comprising:
- an input portion comprising:
- a magnetoelectric (ME) material layer;
- and
- a first ferromagnetic (FM) material layer on the ME material layer, the first FM material layer comprising a perpendicular magnetic anisotropy (PMA) ferromagnet material;
- an output portion comprising:
- a second FM material layer magnetically coupled with and electrically isolated from the first FM material layer, the second FM material layer comprising a perpendicular magnetic anisotropy (PMA) ferromagnet material.
3 more elements
An apparatus comprising:
- a transistor comprising:
- a magnetoelectric (ME) material layer;
- a first ferromagnetic (FM) material layer on the ME material layer, the first FM material layer comprising a perpendicular magnetic anisotropy (PMA) ferromagnet material;
- a dielectric layer on the first FM material layer;
- and
- a Hall cross structure on the dielectric layer, the Hall cross structure comprising a second FM material layer, the second FM material layer comprising a PMA ferromagnet material.
3 more elements
Dependencies are inferred from the claim text.