Method for creating interconnections
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsThibaut CHÊNE, Fabrice NEMOUCHI, Roselyne SEGAUD, Thierry CHEVOLLEAU
Life of this patent
Estimating the term…
Abstract
A method for manufacturing an interconnecting level includes providing a substrate having a connecting terminal, forming a first dielectric layer on the substrate, and forming and structuring an etching stop layer on the first dielectric layer to define a first line pattern including a via opening. A second dielectric layer is formed on the etching stop layer, and a second mask defining a line pattern aligned with the first line pattern is formed. The dielectric layers are etched to form upper and lower cavities, which are filled with a metal material to form a metal line and a metal via connected to the connecting terminal.
Claims15
1-14. (canceled)
A method for manufacturing an interconnecting level comprising at least one metal line and at least one metal via, the method comprising:
- providing a substrate including at least one connecting terminal;
- forming a first dielectric layer on the substrate;
- forming an etching stop layer on the first dielectric layer, the etching stop layer having an etching selectivity relative to the first dielectric layer;
- structuring the etching stop layer through a first mask to form at least one first line pattern in the etching stop layer, the at least one first line pattern including at least one via opening;
- forming a second dielectric layer on the structured etching stop layer;
- forming a second mask on the second dielectric layer, the second mask defining at least one second line pattern vertically aligned with the at least one first line pattern;
- etching the second dielectric layer to form an upper cavity that partially stops on the etching stop layer;
- etching the first dielectric layer through the at least one via opening to form a lower cavity that stops on the at least one connecting terminal of the substrate;
- and
- filling the upper cavity and the lower cavity with at least one metal material to form the at least one metal line in the upper cavity and the at least one metal via in the lower cavity,
- wherein the at least one metal line is connected to the at least one metal via through the at least one via opening, and the at least one metal via is connected to the at least one connecting terminal.
A device comprising, in a stack along a vertical direction:
- a substrate including at least one connecting terminal;
- and
- an interconnecting level including:
- a first dielectric layer containing at least one metal via connected to the at least one connecting terminal;
- a second dielectric layer containing at least one metal line connected to the at least one metal via;
- and
- an etching stop layer disposed between the at least one metal via and the at least one metal line,
- wherein the etching stop layer has an etching selectivity relative to the first dielectric layer, includes at least one via opening through which the at least one metal via and the at least one metal line are connected, and includes at least one first line pattern, and
- wherein the at least one metal line is disposed vertically above the at least one first line pattern.
Dependencies are inferred from the claim text.