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US 2026/0181276 A1Published application
Solid-state imaging element, imaging apparatus, and imaging method
AssigneeOmniVision Technologies, Inc.
InventorNagataka TANAKA
Life of this patent
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Abstract
An overflow integration capacitor is shared by a pair of photodiodes. Overflow gates are provided between respective photodiodes and the overflow integration capacitor. Further, in the overflow gates, potential barriers are set lower than respective ones of transfer gates in charge accumulation periods of the photodiodes.
Claims14
A solid-state imaging element comprising:
- a pair of photodiodes;
- a floating diffusion that is shared by the pair of photodiodes;
- a pair of transfer gates provided between respective ones of the pair of photodiodes and the floating diffusion;
- an overflow integration capacitor that is shared by the pair of photodiodes;
- and
- a pair of overflow gates provided between respective ones of the pair of photodiodes and the overflow integration capacitor, and in each of which a potential barrier is set to be lower than that of a respective one of the pair of transfer gates during a charge accumulation period of a respective one of the pair of photodiodes.
3 more elements
An imaging method using a solid-state imaging element comprising:
- a pair of photodiodes;
- a floating diffusion that is shared by the pair of photodiodes;
- a pair of transfer gates provided between respective ones of the pair of photodiodes and the floating diffusion;
- an overflow integration capacitor that is shared by the pair of photodiodes;
- and
- a pair of overflow gates provided between respective ones of the pair of photodiodes and the overflow integration capacitor, wherein
- a potential barrier of each of the pair of overflow gates is set to be lower than that of a respective one of the pair of transfer gates during a charge accumulation period of a respective one of the pair of photodiodes.
4 more elements
Dependencies are inferred from the claim text.