Current detection circuit and over-current protection device
AssigneeSTMicroelectronics International N.V.
InventorKarl GRANGE
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AssigneeSTMicroelectronics International N.V.
InventorKarl GRANGE
Estimating the term…
The present disclosure relates to a current sensing circuit comprising at least several pairs of first and second field-effect transistors. In an example current sensing circuit, the first and second field-effect transistor are configured such that: a first one of the source and drain electrodes of each of the first and second transistors is coupled to an input of the current sensing circuit on which a current to be sensed is intended to be applied; and for each pair of one of the first transistors and of one of the second transistors, the size ratio W1/L1 of the first transistor is higher than the size ratio W2/L2 of the second transistor, with W1 and W2 corresponding to the widths of the active areas of the first and second transistors, and L1 and L2 corresponding to the lengths of the active areas of the first and second transistors.
A current sensing circuit comprising at least several pairs of first field-effect transistors and second field-effect transistors, wherein the current sensing circuit is configured such that:
Dependencies are inferred from the claim text.