Processing apparatus and processing method

A processing method in a processing apparatus including a first member, a second member, an ERG (Electro-Adhesive Gel) sheet disposed between the first member and the second member, a processing container that performs processing on a wafer using plasma generated inside, and control circuitry, wherein the ERG sheet includes an ERG layer, a plurality of electrode pairs each having two electrodes, and a substrate on which the plurality of electrode pairs are disposed, the processing method comprising:

• a) controlling thermal conductivity of the ERG layer, for each of the plurality of electrode pairs, by independently controlling voltages applied to each of the plurality of electrode pairs such that a temperature distribution of the first member or the second member becomes a predetermined temperature distribution due to heat exchange between the first member and the second member.