Read-only memory (rom) device and method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHiromasa OTSUBO, Chien-Ying CHEN, Preciliano Asinas RUIZ, JR., Kazumasa UNO, Hidemitsu KOJIMA, Tai-Te CHU
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Abstract
A read-only memory (ROM) device includes an active region extending along a first direction, and a plurality of gates extending across and over the active region, along a second direction transverse to the first direction. The plurality of gates correspondingly configures, together with the active region, a plurality of transistors. Each of the plurality of transistors is configured to store a datum. The active region extends continuously across and under more than four conductive gates among the plurality of gates
Claims20
A read-only memory (ROM) device, comprising:
- an active region extending along a first direction;
- and
- a plurality of gates extending across and over the active region, along a second direction transverse to the first direction,
- wherein
- the plurality of gates correspondingly configures, together with the active region, a plurality of transistors,
- each of the plurality of transistors is configured to store a datum, and
- the active region extends continuously across and under more than four conductive gates among the plurality of gates.
A read-only memory (ROM) device, comprising:
- a plurality of instances of a circuit region, wherein
- the circuit region comprises:
- a plurality of active regions extending continuously along a first direction;
- and
- a plurality of gates extending across the plurality of active regions along a second direction transverse to the first direction, the plurality of gates configuring, together with the plurality of active regions, a plurality of transistors configured to store data,
- the plurality of instances of the circuit region comprises first and second instances which abut each other and share a set of source/drains.
A method of manufacturing a read-only memory (ROM) device, the method comprising:
- forming, over a substrate, a plurality of active regions extending continuously along a first direction;
- forming a plurality of gates extending over the plurality of active regions along a second direction transverse to the first direction, the plurality of gates configuring, together with the plurality of active regions, a plurality of transistors configured to store data;
- and
- forming one or more vias over one or more source/drains in the plurality of active regions in accordance with data to be stored in the ROM device,
- wherein
- the plurality of active regions, the plurality of gates and the plurality of transistors are arranged in a plurality of instances of a circuit region which comprises at least four adjacent transistors in the first direction, and
- the forming of at least one active region among the plurality of active regions comprises no formation of an isolation structure in the at least one active region between adjacent instances among the plurality of instances.
Dependencies are inferred from the claim text.