US 2026/0178893 A1 · Skin-Like Stretchable Neuromorphic Devices for Artificial Intelligence Applications

Abstract

This disclosure generally relates to neuromorphic computing devices, systems, and platforms for artificial intelligence applications. Specifically, the disclosed platform is stretchable, and devices fabricated based on such a platform can thus be configured to adhere to human skin conformably even in areas of the skin that frequently stretch, bend, or otherwise deform. The devices may be integrated to form a wearable and stretchable artificial neural network (ANN) circuit for performing predictive health monitoring and other functions. For example, each neuron of the ANN may be based on a neuromorphic organic-electrochemical-transistor (OECT) structure and each OECT structure may be based on a redox-active electrochemical cell. The ANN can be trained and updated as the device is being worn on human body. The electronic characteristics relevant the neuromorphic computation of the ANN may be minimally impacted by repeated stretching of the device.

Claims24

Dependent claims

A wearable device:

comprising
a stretchable substrate;
a stretchable capping layer;
and
a stretchable artificial neural network (ANN) circuitry integrated between the stretchable substrate and the stretchable capping layer, the ANN circuitry comprising interconnecting artificial neurons, wherein each artificial neuron comprises at least one stretchable organo-electrochemical transistor (OECT) and each OECT comprises:
a gate electrode;
a semiconducting layer, the semiconducting layer being redox-active;
a source electrode and a drain electrode in electrical contact with the semiconducting layer;
a dielectric layer disposed between the gate electrode and the semiconducting layer, the dielectric layer being of an electrolyte-type;
and
an electrical channel through the semiconducting layer from the source electrode to the drain electrode, the electrical channel being characterized by a plurality of conductance states to enable neuromorphic computation in the ANN circuitry;
wherein the gate electrode, the semiconducting layer, the source electrode, the drain electrode, and the dielectric layer are stretchable.

9 more elements

Dependencies are inferred from the claim text.

Skin-Like Stretchable Neuromorphic Devices for Artificial Intelligence Applications

Life of this patent

Skin-Like Stretchable Neuromorphic Devices for Artificial Intelligence Applications

Life of this patent

Abstract

Claims24