Low cost segmented light-emitting die architecture for displaying images and method of manufacture

A hybridized device comprising:

• a micro-display;
• a driver comprising a plurality of drive channels;
• and
• a semiconductor die comprising:
• a plurality of rows and columns of light-emitting segments separated via trenches, wherein each of the light-emitting segments comprises a p-type region and an n-type region,
• at least one first electrical contact per row electrically coupled to the p-type region or the n-type region of each of the light-emitting segments in the corresponding row, and
• at least one second electrical contact per column electrically coupled to the p-type region or the n-type region of each of the light-emitting segments in the corresponding column,
• wherein each of the at least one first electrical contact and the at least one second electrical contact is electrically and mechanically coupled to one of the plurality of drive channels of the driver.

A method of manufacturing a lighting device, the method comprising:

• obtaining a semiconductor die comprising a plurality of rows and columns of light-emitting segments separated from one another by trenches, wherein one of n-type or p-type first contacts for each of the light-emitting segments are disposed in the trenches between the light-emitting segments, and wherein an opposite one of the n-type or p-type first contacts for each of the light-emitting segments are disposed within a pixel area of each of the light-emitting segments;
• depositing a first dielectric layer over at least a portion of the trenches, leaving portions of the trenches where the p-or n-type contact are disposed exposed from the first dielectric to form second p-or n-type electrical contacts;
• depositing at least one conductive layer over each row of light-emitting segments to form third p-or n-type electrical contacts;
• forming first contact pads on a bottom surface of the semiconductor die, wherein the first contact pads are electrically coupled to the second p-or n-type electrical contacts;
• and
• forming second contact pads on the bottom surface of the semiconductor die, wherein the second contact pads are electrically coupled to the third p-or n-type electrical contacts.