Teg device and cryogenic intrinsic characteristics analysis method for quantitative evaluation for impact of high-k based passivation layer on electrical properies of 2d fet structure

Abstract

Provided are a test element group (TEG) device and a cryogenic intrinsic characteristic analysis method for quantitatively assessing impact of a high-k-based passivation layer on an electrical characteristic of a device in a two-dimensional (2D) field effect transistor (FET) structure. Herein, to analyze a FET device that includes a channel of a 2D material and a passivation layer of a high-k material, a first FET device in which the passivation layer is arranged in a first direction with respect to the channel and a second FET device in which the passivation layer is arranged in a second direction different from the first direction with respect to the channel may be prepared. The first and second charge amounts trapped in the passivation layers in the first and second FET devices, respectively, may be compared to assess quantitative impact of the shape of the passivation layer on the FET device.

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