Method and apparatus for depositing silicon-containing layer

A semiconductor processing apparatus comprising:

• one or more reaction chambers for accommodating a substrate comprising a gap;
• a first source for a first reactant in gas communication via a first valve with one of the reaction chambers;
• a second source for a second reactant in gas communication via a second valve with one of the reaction chambers;
• a third source for a first silicon precursor in gas communication via a third valve with one of the reaction chambers;
• a capacitively-coupled plasma source connected to at least one of the reaction chambers;
• an inductively-coupled plasma source connected to at least one of the reaction chambers;
• and
• a controller operably connected to the first, second, and third gas valves and configured and programmed to control:
• providing a first reactive species generated from a capacitively-coupled plasma produced from a first reactant gas into the reaction chamber;
• executing a plurality of deposition cycles, wherein the deposition cycle comprises
• providing a first silicon precursor in vapor phase into the reaction chamber;
• and
• providing a second reactive species generated from an inductively-coupled plasma produced from a second reactant gas into the reaction chamber.