Aluminum borohydride amine coordination compounds

A precursor vessel comprising a borohydride precursor comprising a borohydride coordination compound with a chemical formula MH3-x(BH4)x(NR1R2R3), wherein M is a Group 13 metal, wherein x has a value of 2 or 3, and:

• wherein R1, R2, and R3 are each independently selected from C1 to C8 alkyl groups, or
• wherein R1 together with R2 and N forms a four to nine membered ring, and:
• R3 is selected from C1 to C8 alkyl groups, or
• R3 together with R2 and N forms a four to nine membered ring,
• wherein the precursor vessel is configured to supply a vapor comprising the borohydride precursor to a reaction chamber of a vapor deposition system.

A method for depositing a material on a substrate, the method comprising:

• providing a substrate in a reaction chamber, and then
• providing, into the reaction chamber, a vapor-phase borohydride precursor comprising a borohydride coordination compound with a chemical formula MH3-x(BH4)x(NR1R2R3), wherein M is a Group 13 metal, wherein x has a value of 2 or 3, and:
• wherein R1, R2, and R3 are each independently selected from C1 to C8 alkyl groups, or
• wherein R1 together with R2 and N forms a four to nine membered ring, and:
• R3 is selected from C1 to C8 alkyl groups, or
• R3 together with R2 and N forms a four to nine membered ring,
• thereby forming a first thin film comprising at least a portion of the borohydride coordination compound on a portion of a surface of the substrate.

A system for depositing a material, the system comprising:

• a reaction chamber for receiving the substrate,
• a first source, connected via a first valve to the reaction chamber, for providing a vapor-phase borohydride precursor comprising a borohydride coordination compound with a chemical formula MH3-x(BH4)x(NR1R2R3), wherein M is a Group 13 metal, wherein x has a value of 2 or 3, and:
• wherein R1, R2 and R3 are each independently selected from C1 to C8 alkyl groups, or
• wherein R1 together with R2 and N forms a four to nine membered ring, and:
• R3 is selected from C1 to C8 alkyl groups, or
• R3 together with R2 and N forms a four to nine membered ring, and
• a controller operably connected to the first valve, wherein the controller is configured and programmed to open the first valve to provide a flow of the vapor-phase borohydride precursor into the reaction chamber and to close the first valve to cease the flow of the vapor-phase borohydride precursor into the reaction chamber.

A composition configured for depositing a thin film, the composition comprising a borohydride precursor comprising a borohydride coordination compound with a chemical formula MH3-x(BH4)x(NR1R2R3), wherein M is a Group 13 metal, wherein x has a value of 2 or 3, and:

• wherein R1, R2, and R3 are each independently selected from C1 to C8 alkyl groups, or
• wherein R1 together with R2 and N forms a four to nine membered ring, and:
• R3 is selected from C1 to C8 alkyl groups, or
• R3 together with R2 and N forms a four to nine membered ring.