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US 2026/0176747 A1Published application
Deposition of halide-free metal films using noble metal catalysts
AssigneeApplied Materials, Inc.
InventorsAndrea Leoncini, Yong Jin Kim, Jiecong Tang, Mark Saly
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Abstract
Methods for depositing metal films on a semiconductor substrate are described. A noble metal layer is formed on the substrate and serves as a catalyst for subsequent formation of a metal film on the noble metal layer. The noble metal layer is exposed to an organometallic precursor and a hydrogen source to form the metal film. The exposures can be sequential or simultaneous.
Claims20
A method of forming a metal film on a semiconductor substrate, the method comprising:
- forming a noble metal layer on a substrate;
- exposing the noble metal layer to an organometallic precursor;
- and
- exposing the noble metal layer to a hydrogen source to form the metal film on the substrate.
1 more element
A method of forming a metal film on a semiconductor substrate, the method comprising:
- forming the metal film in a process cycle comprising sequential exposure of a noble metal layer on a substrate to an organometallic precursor, purge gas, a hydrogen source, and purge gas.
Dependencies are inferred from the claim text.