Dsa of liquid crystal block copolymers for integrated circuit patterning

A block copolymer, which is an AB diblock copolymer with a first block A of structure (I) and a second block B of structure (II), wherein R and R1 are individually selected from a C-1 to C-4 alkyl, n is the number of repeat units in structure (I), m is the number of repeat units in structure (II), and the mole % of repeat units of structure (I) ranges from about 35 mole % to about 94 mole %, and the mole % of repeat units of structure (II) ranges from about 6 mole % to about 65 mole % of the total moles of repeat units of structures (I) and (II), and the sum of the mole % of repeat units of structure (I) and (II) equals 100 mole %;

• R2 is selected from a C-1 to C-11 alkyl, L is a C-5 to C-12 linear alkylene, R3 is selected from a C-3 to C-8 linear alkyl, and R′ is H or a C-3 to C-8 linear alkyl, and further wherein said block copolymer has a polydispersity of 1 to about 1.31, where said block copolymer is made by either RAFT polymerization or anionic polymerization, and has a polydispersity of 1 to about 1.13 and has an Mn ranging from about 8 kDa to about 25 kDa;