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US 2026/0176235 A1Published application
Monomer, polymer, chemically amplified resist composition, and pattern forming process
AssigneeShin-Etsu Chemical Co., Ltd.
InventorMasahiro Fukushima
Life of this patent
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Abstract
The polymer obtained from a monomer having a monocyclic lactam structure has excellent solvent solubility. The chemically amplified resist composition comprises the polymer. The chemically amplified resist composition exhibits a high sensitivity and contrast and forms a pattern of satisfactory profile having improved lithography properties such as EL, LWR, CDU and DOF.
Claims14
A monomer having the formula (A):
- wherein n1 is 1, 2 or 3, n2 is 0, 1 or 2,
- RA is hydrogen, fluorine, methyl or trifluoromethyl,
- XL1 is a single bond, optionally substituted phenylene group or optionally substituted naphthylene group,
- XL2 is a single bond or C1-C40 hydrocarbylene group which may contain a heteroatom,
- LA and LB are each independently a single bond, ether bond, ester bond, amide bond, carbonate bond or carbamate bond,
- LC is a single bond, carbonyl group or ester bond,
- R1 is halogen, nitro, cyano, hydroxy, carboxy, or a C1-C20 hydrocarbyl group, C1-C20 hydrocarbyloxy group or C1-C20 hydrocarbylthio group, which may contain a heteroatom;
- when n2=2, two R1 may be identical or different, and
- R2 is a C1-C20 hydrocarbyl group which may contain a heteroatom.
6 more elements
Dependencies are inferred from the claim text.