Semiconductor package and method of manufacturing semiconductor package

A method for manufacturing a semiconductor package comprising:

• forming a semiconductor wafer including a preliminary substrate and a plurality of through-electrodes in the preliminary substrate;
• forming a substrate by removing a portion of the preliminary substrate, wherein the substrate has a back surface from which the plurality of through-electrodes protrude;
• forming a preliminary protective layer and a preliminary buffer film covering the plurality of through-electrodes on the back surface of the substrate;
• forming a flat surface by planarizing the preliminary protective layer and the preliminary buffer film, wherein the plurality of through-electrodes are exposed on the flat surface;
• forming a back-side insulating layer including an etched groove on the flat surface;
• forming an outer preliminary barrier layer and a first conductive material layer on surfaces of the back-side insulating layer, and the etched groove;
• forming an insulating material layer on the first conductive material layer;
• forming a preliminary insulating pattern layer in the etched groove by etching a portion of the insulating material layer;
• forming an inner preliminary barrier layer and a second conductive material layer on surfaces of the first conductive material layer and the preliminary insulating pattern layer;
• and
• forming a pad by planarizing portions of the first conductive material layer, the inner preliminary barrier layer, the preliminary insulating pattern layer, the second conductive material layer, and the outer preliminary barrier layer.

A method for manufacturing a semiconductor package comprising:

• forming a semiconductor wafer including a preliminary substrate and a through-electrode in the preliminary substrate;
• forming a substrate by removing a portion of the preliminary substrate, wherein the substrate has a back surface from which the through-electrode protrudes;
• forming a preliminary protective layer and a preliminary buffer film covering the through-electrode on the back surface of the substrate;
• forming a flat surface by planarizing the preliminary protective layer and the preliminary buffer film, wherein the through-electrode is exposed on the flat surface;
• forming a back-side insulating layer including an etched groove on the flat surface;
• forming a first conductive material layer on the back-side insulating layer, and the etched groove;
• forming a preliminary insulating pattern layer in the etched groove;
• forming a second conductive material layer on the first conductive material layer and the preliminary insulating pattern layer;
• and
• forming a pad by planarizing portions of the first conductive material layer, the preliminary insulating pattern layer, and the second conductive material layer.