Method for manufacturing semiconductor device, substrate, and semiconductor element
AssigneeResonac Corporation
InventorShizu FUKUZUMI
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AssigneeResonac Corporation
InventorShizu FUKUZUMI
Estimating the term…
A method for manufacturing a semiconductor device includes: layering a semiconductor element, which includes a protruding electrode having a solder layer at a distal end portion of the protruding electrode, on a substrate, the substrate including an electrode pad having a metal protruding portion on a surface of the electrode pad, with a surface of the substrate on which the electrode pad is provided facing a surface of the semiconductor element on which the protruding electrode is provided, such that the solder layer in the semiconductor element and a distal end of the metal protruding portion in the substrate are brought into contact with each other in a state in which a resin film is interposed between the semiconductor element and the substrate; and melting the solder layer by heating to connect the substrate and the semiconductor element.
A method for manufacturing a semiconductor device, comprising:
A substrate, comprising an electrode pad having a metal protruding portion with a distal end having an acute angle on a surface of the electrode pad.
A semiconductor element, comprising an electrode pad having a metal protruding portion with a distal end having an acute angle on a surface of the electrode pad.
Dependencies are inferred from the claim text.