Under-bump metallization structure and methods of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJui Shen Chang, Chung-Yu Chiu, Chen-Nan Chiu, Yao-Chun Chuang, Chang-Jung Hsueh
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Abstract
A semiconductor structure and methods for forming the same. In some embodiments, a semiconductor structure includes an under-bump metallization structure where the under-bump metallization structure includes a recess. Further, the semiconductor structure includes a ball structure is located above the recess of the under-bump metallization structure. Additionally, the semiconductor structure includes an intermetallic compound structure located above the under-bump metallization structure and surrounding the ball structure and a solder portion located above the intermetal compound structure.
Claims20
A semiconductor structure, comprising:
- a redistribution layer;
- a polyimide layer located above the redistribution layer;
- an under-bump metallization structure extending through the polyimide layer and in contact with the redistribution layer, wherein the under-bump metallization structure includes a recess;
- a ball structure located above the recess of the under-bump metallization structure;
- an intermetallic compound structure located above and connected to the under-bump metallization structure and surrounding the ball structure;
- and
- a solder material located above the intermetallic compound structure, such that between the intermetallic compound structure and the under-bump metallization structure is free of the solder material.
A method for forming an under-bump metallization structure with a solder ball and an intermetallic compound structure, comprising:
- forming an under-bump metallization structure above a polyimide layer, wherein the under-bump metallization structure includes a recess;
- placing a solder ball above the under-bump metallization structure, wherein the solder ball includes a ball structure surrounded by a solder material and the ball structure is located above the recess;
- and
- annealing the under-bump metallization structure, solder material and ball structure to form an intermetallic compound structure located above the under-bump metallization structure and between the ball structure and the solder material such that between the intermetallic compound structure and the under-bump metallization structure is free of solder material.
A method for forming an under-bump metallization structure, comprising:
- forming a cavity within a dielectric layer;
- sputtering a seed layer above the dielectric layer;
- and
- plating a high texture material above the seed layer to form the under-bump metallization structure.
Dependencies are inferred from the claim text.