Through glass via structures including an organic seed material layer for integrated circuit device packages

A system, comprising:

• a plurality of integrated circuit (IC) die electrically coupled to first metallization features on a first side of a substrate comprising glass;
• a through hole extending through a thickness of the glass between a first side surface and a second side surface of the glass;
• a coaxial metal inductor structure within the through hole, wherein the coaxial metal inductor structure comprises:
• a filament of a metal comprising Cu and extending through the thickness of the glass;
• and
• an annular layer of magnetic metal alloy cladding the filament;
• and
• a polymer layer lining the through hole between the magnetic metal alloy and the glass,
• wherein the polymer layer is primarily carbon and further comprises sulfur.

A method comprising:

• receiving a workpiece comprising glass;
• forming holes through a thickness of the glass;
• depositing a polymer seed layer over a sidewall of the holes, wherein the polymer seed layer comprises sulfur;
• and
• electrolytically plating a metallization within the holes by conducting an electrical current through the polymer seed layer.