Substrate processing system, substrate processing method using the same, and semiconductor device manufacturing method including the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJinoh IM, Donghoon KWON, ILYOUNG YOON
Life of this patent
Estimating the term…
Abstract
A substrate processing system includes a measuring apparatus configured to measure a surface level of a substrate, a transfer module connected to the measuring apparatus, a first polishing apparatus connected to the transfer module and including a first chuck and a first plasma nozzle facing the first chuck, and a second polishing apparatus connected to the transfer module and including a second chuck and a second plasma nozzle facing the second chuck, where a diameter of the second plasma nozzle is larger than a diameter of the first plasma nozzle.
Claims20
A substrate processing system comprising:
- a measuring apparatus configured to measure a surface level of a substrate;
- a transfer module connected to the measuring apparatus;
- a first polishing apparatus connected to the transfer module and comprising a first chuck and a first plasma nozzle facing the first chuck;
- and
- a second polishing apparatus connected to the transfer module and comprising a second chuck and a second plasma nozzle facing the second chuck,
- wherein a diameter of the second plasma nozzle is larger than a diameter of the first plasma nozzle.
A substrate processing method comprising:
- measuring a surface level of a substrate;
- and
- performing a polishing process on the substrate based on the measured surface level of the substrate,
- wherein the performing of the polishing process comprises:
- performing a first polishing process in a first polishing apparatus, and
- performing a second polishing process in a second polishing apparatus, and
- wherein a temperature of the first polishing process is lower than a temperature of the second polishing process.
A semiconductor device manufacturing method comprising:
- forming an active pattern, a source/drain pattern, a channel pattern, and a gate electrode on a first surface of a substrate;
- forming a metal layer comprising lines on the gate electrode;
- performing a polishing process on a second surface of the substrate that is opposite to the first surface;
- and
- forming a power delivery network layer on the second surface,
- wherein the polishing process comprises:
- a first polishing process performed at a first temperature, and
- a second polishing process performed at a second temperature that is different from the first temperature.
Dependencies are inferred from the claim text.