Manufacturing method for semiconductor device
AssigneeCanon Kabushiki Kaisha
InventorsTETSUYA KIMURA, KOSUKE ASANO
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Abstract
A manufacturing method for a semiconductor device includes forming a depression in an interlayer dielectric film placed on a semiconductor substrate, forming a planarized film made of a first cured product of a first curable composition on the interlayer dielectric film so as to cover the depression, forming, on the planarized film, a pattern made of a second cured product of a second curable composition and having an opening on the depression, etching the planarized film by using the pattern so as to form a trench in the first cured product in the depression, forming a metal film on the interlayer dielectric film so as to fill the trench with a metal, and polishing the metal film by a CMP method so as to leave a metal pattern in the trench.
Claims18
A manufacturing method for a semiconductor device, the method comprising:
- forming a depression in an interlayer dielectric film placed on a semiconductor substrate;
- forming a planarized film made of a first cured product of a first curable composition on the interlayer dielectric film so as to cover the depression;
- forming, on the planarized film, a pattern made of a second cured product of a second curable composition and having an opening on the depression;
- etching the planarized film by using the pattern so as to form a trench in the first cured product in the depression;
- forming a metal film on the interlayer dielectric film so as to fill the trench with a metal;
- and
- polishing the metal film by a chemical mechanical polishing (CMP) method so as to leave a metal pattern in the trench.
A manufacturing method for a semiconductor device, the method comprising:
- forming a depression in an interlayer dielectric film placed on a semiconductor substrate;
- forming, on the interlayer dielectric film, a pattern made of a cured product of a curable composition and having an opening on the depression so as to cover the depression;
- etching the overall pattern so as to form a trench in the cured product in the depression;
- forming a metal film on the pattern so as to fill the trench with a metal;
- and
- polishing the metal film by a chemical mechanical polishing (CMP) method so as to leave a metal pattern in the trench.
A manufacturing method for a semiconductor device, the method comprising:
- forming a first insulating film made of a first cured product of a first curable composition on a semiconductor substrate;
- forming, on the first insulating film, a second insulating film made of a second cured product of a second curable composition and having a trench;
- forming a metal film on the second insulating film so as to fill the trench with a metal;
- and
- polishing the metal film by a chemical mechanical polishing (CMP) method so as to leave a metal pattern in the trench.
A manufacturing method for a semiconductor substrate, the method comprising:
- forming, on a semiconductor substrate, an insulating film made of a cured product of a curable composition and having a trench;
- forming a metal film on the insulating film so as to fill the trench with a metal;
- and
- polishing the metal film by a chemical mechanical polishing (CMP) method so as to leave a metal pattern in the trench.
Dependencies are inferred from the claim text.