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AssigneeKorea Advanced Nano Fab Center
InventorsDong Hwan JUN, Shin Keun KIM, Chang Hwan KIM, Gwan Yeol PARK, Taek KIM
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Disclosed are a chemical mechanical planarization method in a semiconductor manufacturing process, wherein the chemical mechanical planarization method is performed to apply an electric field to the surface of a wafer using an electrophoretic phenomenon during a chemical mechanical planarization (CMP) process in order to control the distribution of charged particles in a slurry, and a chemical mechanical planarization apparatus in a semiconductor manufacturing process, wherein the chemical mechanical planarization apparatus includes CMP equipment configured to perform a CMP process of planarizing the surface of a wafer and an electric field application controller configured to apply an electric field to the surface of the wafer during the CMP process.
A chemical mechanical planarization method in a semiconductor manufacturing process, wherein the chemical mechanical planarization method is performed to apply an electric field to a surface of a wafer using an electrophoretic phenomenon during a chemical mechanical planarization (CMP) process in order to control distribution of charged particles in a slurry.
A chemical mechanical planarization apparatus in a semiconductor manufacturing process, wherein the chemical mechanical planarization apparatus comprises CMP equipment configured to perform a CMP process of planarizing a surface of a wafer and an electric field application controller configured to apply an electric field to the surface of the wafer during the CMP process.
Dependencies are inferred from the claim text.