Method of manufacturing a semiconductor device having hexagonal phase crystal structures

Abstract

A method of manufacturing a semiconductor device includes forming a lower interconnection line; forming a lower interlayer insulating layer over the lower interconnection line; forming a lower contact plug vertically penetrating the lower interlayer insulating layer to be electrically connected to the lower interconnection line; forming a memory cell over the lower contact plug; forming a straining layer surrounding the memory cell; performing a phase change process to phase-change the straining layer into a spacer layer; forming an upper contact plug electrically connected to an upper portion of the memory cell; and forming an upper interconnection line over the upper contact plug. The spacer layer includes hexagonal phase crystal structures.

Dependencies are inferred from the claim text.