High power seed layer patterning on piezoelectric thin films for piezoelectric device fabrication

A piezoelectric device, comprising:

• a bottom electrode disposed over a substrate;
• a high power seed layer disposed over the bottom electrode, the high power seed layer having a high power seed layer grain size and a high power seed layer grain orientation;
• a piezoelectric layer disposed over the high power seed layer, the piezoelectric layer having a piezoelectric grain size and a piezoelectric grain orientation, wherein the high power seed layer grain size matches the piezoelectric grain size and the high power seed layer grain orientation matches the piezoelectric grain orientation;
• and
• a top electrode disposed over the piezoelectric layer.

A method of forming a piezoelectric device, comprising:

• disposing a bottom electrode over a substrate;
• disposing a high power seed layer over the bottom electrode at a target bias power greater than 3 kW;
• disposing a piezoelectric layer over the bottom electrode;
• and
• disposing a middle electrode over the piezoelectric layer;
• disposing a second high power seed layer over the middle electrode at a target bias power greater than 3 KW;
• and
• disposing a second piezoelectric layer over the bottom electrode;
• and
• disposing a top electrode over the piezoelectric layer.