Light-emitting diode structure and manufacturing method thereof

A manufacturing method of a light-emitting diode structure, comprising:

• providing a substrate;
• forming a first type semiconductor layer, an active layer, and a second type semiconductor layer on the substrate in sequence;
• etching a part of the second type semiconductor layer, a part of the active layer, and a part of the first type semiconductor layer in sequence to expose an etched side surface of the second type semiconductor layer, an etched side surface of the active layer, and an etched side surface of the first type semiconductor layer;
• and
• using a water vapor to penetrate at least a part of the etched side surface of the second type semiconductor layer, the etched side surface of the active layer, and at least a part of the etched side surface of the first type semiconductor layer, so as to form a metal oxide in at least a part of an edge region of the second type semiconductor layer, an edge region of the active layer, and at least a part of an edge region of the first type semiconductor layer.