Process for manufacturing a light-emitting diode

A process for manufacturing a light-emitting diode (LED), the process comprising the following steps:

• a—providing a sapphire substrate (SubS);
• b—depositing a layer, called the intermediate layer (Cinter), on the substrate so as to obtain an epitaxial intermediate layer, the intermediate layer being made of a transition metal nitride selected from:
• TiN, ZrN, HfN, NbN, TaN, VN, MoN, WN, CrN;
• c—depositing a layer, called the buffer layer (CT), on the intermediate layer so as to obtain an epitaxial layer, the buffer layer being made of AlxGa1-xN with 0≤x≤1;
• d—depositing, on the buffer layer, a stack (CFLED) performing a light-emitting-diode function, the stack comprising at least one active layer (CA), and an injection layer (CI1, CI2) on either side of the active layer;
• e—bonding a substrate, called the transfer substrate (SubR), to the stack by virtue of at least one bonding layer (CC);
• and
• f—carrying out laser lift-off of the sapphire substrate by applying a laser beam at least through the sapphire substrate and the intermediate layer, the laser beam (RL) having an emission wavelength configured to be absorbed by the intermediate layer.