Image sensor and method of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun-Liang Lu, Ming-Hsien Yang, Chun-Hao Chou, Kuo-Cheng Lee
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Abstract
Provided is an image sensor and a method of forming the same. The image sensor includes a first substrate having a first surface and a second surface opposite to each other; a plurality of photodetectors, disposed in the first substrate; and a plurality of color filters, disposed on the second surface of the first substrate and respectively corresponding to the plurality of photodetectors. The plurality of color filters are composed of a plurality of PIN diodes, and the plurality of PIN diodes are configured to absorb light of different wavelength ranges by applying different bias voltages.
Claims20
A method of forming an image sensor, comprising:
- forming a photodetector in a substrate;
- forming a first material layer on the substrate;
- forming an intrinsic material layer on the first material layer;
- forming a second material layer on the intrinsic material layer;
- and
- patterning the first material layer, the intrinsic material layer, and the second material layer to form a diode directly over the photodetector, wherein the diode comprises:
- a first layer over the photodetector;
- a second layer over the first layer;
- and
- an intrinsic layer between the first layer and the second layer, wherein the intrinsic layer has a thickness of 30 nm to 80 nm.
A method of forming an image sensor, comprising:
- providing a first substrate having a first surface and a second surface opposite to each other;
- forming a plurality of photodetectors in the first substrate, wherein the plurality of photodetectors are arranged in a first array of a plurality of rows and a plurality of columns;
- forming a stack layer on the second surface of the first substrate;
- and
- patterning the stack layer to form a plurality of color filters respectively corresponding to the plurality of photodetectors, wherein the plurality of color filters are a plurality of PIN diodes arranged in a second array of a plurality of rows and a plurality of columns.
An image sensor, comprising:
- an interconnect structure, having a first surface and a second surface opposite to each other;
- a first substrate, disposed over the first surface of the interconnect structure;
- a second substrate, disposed over the second surface of the interconnect structure;
- a plurality of photodetectors, embedded in the first substrate and extending from an upper surface of the first substrate to the first surface of the interconnect structure;
- a plurality of PIN diodes, disposed over the upper surface of the first substrate, and respectively corresponding to the plurality of photodetectors.
Dependencies are inferred from the claim text.