Lateral semiconductor control rectifier device with direct backside contact

Abstract

A semiconductor device includes a first doped region and a second doped region, the first doped region and the second doped region located on frontside of the semiconductor device, a first well region below the first doped region, a second well region below the second doped region, a third doped region below the first well region, a fourth doped region below the second well region, a first backside contact below the third doped region, and a second backside contact below the fourth doped region. The first backside contact and the second backside contact are configured to connect the third doped region and the fourth doped region to a backside of the semiconductor device, respectively.

Dependencies are inferred from the claim text.