Semiconductor device

A semiconductor device comprising:

• a semiconductor substrate having a cell region and an outer peripheral region that surrounds the cell region;
• a plurality of insulated gate bipolar transistor (IGBT) regions disposed in the cell region and each including an IGBT element;
• and
• a plurality of freewheeling diode (FWD) regions disposed in the cell region and each including an FWD element, wherein
• the plurality of IGBT regions and the plurality of FWD regions are alternately arranged along one direction in a planar direction of the semiconductor substrate,
• the plurality of IGBT regions include three or more IGBT regions arranged along the one direction, a length along the one direction is defined as a width, and a width of one of the plurality of IGBT regions that is located close to a central portion in the one direction is narrower than a width of one of the plurality of IGBT regions that is located close to an end portion in the one direction, and
• a ratio of the width of the one of the plurality of IGBT regions that is located close to the end portion in the one direction to the width of the one of the plurality of IGBT regions that is located close to the central portion in the one direction is set to be between 1.5 and 4.5.

A semiconductor device comprising:

• a semiconductor substrate having a cell region and an outer peripheral region that surrounds the cell region;
• a plurality of insulated gate bipolar transistor (IGBT) regions disposed in the cell region and each including an IGBT element;
• and
• a plurality of freewheeling diode (FWD) regions disposed in the cell region and each including an FWD element, wherein
• the plurality of IGBT regions and the plurality of FWD regions are alternately arranged along one direction in a planar direction of the semiconductor substrate,
• the plurality of FWD regions include three or more FWD regions arranged along the one direction, a length along the one direction is defined as a width, and a width of one of the plurality of FWD regions that is located close to a central portion in the one direction is narrower than a width of one of the plurality of FWD regions that is located close to an end portion in the one direction,
• a number of FWD regions included in the plurality of FWD regions is defined as X, where X is an odd number of three or more, and
• a width of one of the plurality of FWD regions that is located at an {(X+1)/2}th position along the one direction is narrowest among the plurality of FWD regions.

A semiconductor device comprising:

• a semiconductor substrate having a cell region and an outer peripheral region that surrounds the cell region;
• a plurality of insulated gate bipolar transistor (IGBT) regions disposed in the cell region and each including an IGBT element;
• and
• a plurality of freewheeling diode (FWD) regions disposed in the cell region and each including an FWD element, wherein
• the plurality of IGBT regions and the plurality of FWD regions are alternately arranged along one direction in a planar direction of the semiconductor substrate,
• the plurality of FWD regions include three or more FWD regions arranged along the one direction, a length along the one direction is defined as a width, and a width of one of the plurality of FWD regions that is located close to a central portion in the one direction is narrower than a width of one of the plurality of FWD regions that is located close to an end portion in the one direction,
• the outer peripheral region includes a pad portion to be connected to an external terminal portion, and
• a width of one of the plurality of FWD regions that is closest to the pad portion is set to be wider than a width of one of the plurality of FWD regions that is farthest from the pad portion.

A semiconductor device comprising:

• a semiconductor substrate having a cell region and an outer peripheral region that surrounds the cell region;
• a plurality of insulated gate bipolar transistor (IGBT) regions disposed in the cell region and each including an IGBT element;
• and
• a plurality of freewheeling diode (FWD) regions disposed in the cell region and each including an FWD element, wherein
• the plurality of IGBT regions and the plurality of FWD regions are alternately arranged along one direction in a planar direction of the semiconductor substrate,
• the plurality of FWD regions include three or more FWD regions arranged along the one direction, a length along the one direction is defined as a width, and a width of one of the plurality of FWD regions that is located close to a central portion in the one direction is narrower than a width of one of the plurality of FWD regions that is located close to an end portion in the one direction, and
• a ratio of the width of the one of the plurality of FWD regions that is located close to the end portion in the one direction to the width of the one of the plurality of FWD regions that is located close to the central portion in the one direction is set to be between 1.5 and 4.5.

A semiconductor device comprising:

• a semiconductor substrate having a cell region and an outer peripheral region that surrounds the cell region;
• a plurality of insulated gate bipolar transistor (IGBT) regions disposed in the cell region and each including an IGBT element;
• and
• a plurality of freewheeling diode (FWD) regions disposed in the cell region and each including an FWD element, wherein
• the plurality of IGBT regions and the plurality of FWD regions are alternately arranged along one direction in a planar direction of the semiconductor substrate,
• the plurality of FWD regions include three or more FWD regions arranged along the one direction, a length along the one direction is defined as a width, and a width of one of the plurality of FWD regions that is located close to a central portion in the one direction is narrower than a width of one of the plurality of FWD regions that is located close to an end portion in the one direction,
• the outer peripheral region includes a pad portion to be connected to an external terminal portion,
• the plurality of FWD region include an additional FWD region that is close to the pad portion in a direction intersecting the one direction, and
• one of the plurality of IGBT region is disposed close to the pad portion in the one direction.