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US 2026/0173522 A1Published application
Standard cells with unbalanced p/n strength
AssigneeQUALCOMM Incorporated
InventorsRaheel AZMAT, Vishal SRIVASTAVA, Vasisht Mantra VADI
Life of this patent
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Abstract
A chip includes a first rail extending in a first direction, a second rail extending in the first direction, and a first cell. The first cell includes a first p-type diffusion region extending in the first direction, a second p-type diffusion region extending in the first direction, a first n-type diffusion region extending in the first direction, and a first gate extending over the first p-type diffusion region, the second p-type diffusion region, and the first n-type diffusion region in a second direction perpendicular to the first direction.
Claims20
A chip, comprising:
- a first rail extending in a first direction;
- a second rail extending in the first direction;
- and
- a first cell, the first cell comprising:
- a first p-type diffusion region extending in the first direction;
- a second p-type diffusion region extending in the first direction;
- a first n-type diffusion region extending in the first direction;
- and
- a first gate extending over the first p-type diffusion region, the second p-type diffusion region, and the first n-type diffusion region in a second direction perpendicular to the first direction.
6 more elements
A chip, comprising:
- a first rail extending in a first direction;
- a second rail extending in the first direction, wherein the first rail and the second rail are spaced apart by a first height in a second direction perpendicular to the first direction;
- a first cell, wherein the first cell has a second height in the second direction approximately equal to the first height, the first cell comprising:
- a first n-type diffusion region extending in the first direction;
- a first p-type diffusion region extending in the first direction, wherein the first p-type diffusion region has a longer length in the first direction than the first n-type diffusion region;
- a first gate extending over the first p-type diffusion region and the first n-type diffusion region in the second direction;
- and
- a second gate extending over the first p-type diffusion region in the second direction, wherein the second gate is spaced apart from the first gate in the first direction.
5 more elements
Dependencies are inferred from the claim text.