Structures for a high-electron-mobility transistor
AssigneeGlobalFoundries U.S. Inc.
InventorsRichard Rassel, Zhong-Xiang He, Gary Milo, Ramsey Hazbun
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Abstract
Structures for a high-electron-mobility transistor and methods of forming such structures. The structure comprises a layer stack including an active region, and a dielectric layer on the active region of the layer stack. The active region has a perimeter. The dielectric layer includes an opening and portions between the opening and the perimeter of the active region. The structure further comprises a source/drain region inside the opening in the dielectric layer.
Claims20
A structure for a high-electron-mobility transistor, the structure comprising:
- a layer stack including an active region, the active region having a first perimeter;
- a first dielectric layer on the active region of the layer stack, the first dielectric layer including a first opening and a first plurality of portions between the first opening and the first perimeter of the active region;
- and
- a first source/drain region inside the first opening in the first dielectric layer.
A method of forming a structure for a high-electron-mobility transistor, the method comprising:
- forming a layer stack including an active region, wherein the active region has a perimeter;
- forming a dielectric layer including an opening and a plurality of portions between the opening and the perimeter of the active region of the layer stack;
- and
- forming a source/drain region inside the opening in the dielectric layer.
Dependencies are inferred from the claim text.