Method for manufacturing an electronic device
AssigneeSTMicroelectronics International N.V.
InventorPascal CHEVALIER
Life of this patent
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Abstract
An electronic device includes a bipolar transistor having: a collector; an emitter; an intrinsic base made of a monocrystalline semiconductor material, where the intrinsic base rests on the collector and the emitter rests on the intrinsic base; an extrinsic base including a first portion made of a monocrystalline semiconductor material and a second portion made of polycrystalline semiconductor material; and a first layer. In making the device, the first portion is formed from the intrinsic base and the second portion is formed from the first layer.
Claims20
A method of manufacturing an electronic device which comprises a bipolar transistor including:
- a collector region;
- an emitter region;
- and an intrinsic base region;
- wherein the intrinsic base region is made of a monocrystalline semiconductor material and rests on an upper surface of the collector region, and wherein the emitter region rests on a upper surface of the intrinsic base region;
- an extrinsic base region including a first portion made of a monocrystalline semiconductor material and a second portion made of a polycrystalline semiconductor material;
- and a first layer made of a material that supports growth of the material of the second portion by epitaxy;
- the method comprising steps:
- a) forming the first portion by epitaxial growth from the upper surface of the intrinsic base region;
- and
- b) forming the second portion by epitaxial growth from the upper surface of the first layer.
An electronic device, comprising a bipolar transistor, the bipolar transistor comprising:
- a collector region;
- an emitter region;
- an intrinsic base region made of a monocrystalline semiconductor material;
- wherein the intrinsic base region rests on a upper surface of the collector region and the emitter region rests on a upper surface of the intrinsic base region;
- an extrinsic base region comprising a first portion made of a monocrystalline semiconductor material and a second portion made of a polycrystalline semiconductor material;
- and
- a first layer made of a material that supports growth of the material of the second portion by epitaxy;
- wherein the first portion rests on the upper surface of the intrinsic base region and the second portion rests on the first layer.
Dependencies are inferred from the claim text.