Quantum memory cell using broadband superconducting tunable resonator
AssigneeDell Products L.P.
InventorsTejinder Singh, Navjot Kaur Khaira
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AssigneeDell Products L.P.
InventorsTejinder Singh, Navjot Kaur Khaira
Estimating the term…
The technology described herein is directed towards a quantum memory cell for writing, storing and reading a quantum bit (qubit) of information, based on variable coupling between a tunable interface resonator and quantum storage cavity. Tuning the resonators to the same frequency facilitates the energy exchange of qubit information, thereby transferring quantum information to or from the quantum storage cavity for a write operation or a read operation, respectively; detuning stores the quantum information in the quantum storage cavity by preventing transfer. One implementation uses rf-SQUIDs for tuning the tunable interface resonator, based on a control current, to the fixed resonance frequency of the quantum storage cavity. This facilitates fast frequency adjustments to tune and detune the tunable resonator, enabling management of the quantum state read/write operations. Also described is an integrated qubit monitoring system utilizing sense taps connected to the quantum storage cavity via the rf-SQUIDs.
A quantum memory cell, comprising:
A method, comprising:
A quantum memory cell, comprising:
Dependencies are inferred from the claim text.