Passivating microwave dielectrics for semiconductor manufacturing

An apparatus, comprising:

• a dielectric plate with a first surface and a second surface opposite from the first surface, wherein a channel is embedded within the dielectric plate, and wherein the channel exits the dielectric plate at the first surface;
• a dielectric resonator on the second surface of the dielectric plate;
• and
• a coating on the first surface of the dielectric plate and on surfaces of the channel, wherein the coating comprises yttrium and/or zirconium.

An apparatus, comprising:

• a chamber;
• dielectric plate to seal an opening of the chamber, wherein a surface of the dielectric plate within the chamber is covered by a coating comprising yttrium and/or zirconium;
• a plurality of dielectric resonators on the dielectric plate outside of the chamber;
• and
• a plurality of solid state power sources, wherein each of the plurality of solid state power sources is electrically coupled to a corresponding one of the plurality of dielectric resonators, and wherein each of the plurality of solid state power sources is configured to emit electromagnetic radiation with a frequency of at least 1.0 GHz.