Monolithic integrated quantum memory device array with multi-layer superconducting stack

A method, comprising:

• obtaining, by a system comprising at least one processor, first quantum information;
• obtaining, by the system, a first write signal;
• in response to the first write signal, performing, by the system, a first write operation to a first quantum memory cell, comprising matching a first resonance frequency of a first superconducting resonator of the first quantum memory cell associated with the first quantum information, to a second resonance frequency of a first quantum storage cavity of the first quantum memory cell, to transfer first quantum energy corresponding to the first quantum information from the first superconducting resonator to the first quantum storage cavity, and
• after completion of the first write operation, unmatching, by the system, the first resonance frequency of the first superconducting resonator from the second resonance frequency of the first quantum storage cavity to prevent transfer of the first quantum energy from the first quantum storage cavity back to the first superconducting resonator;
• obtaining, by the system, second quantum information;
• obtaining, by the system, a second write signal;
• in response to the second write signal, performing, by the system, a second write operation to a second quantum memory cell, comprising matching a third resonance frequency of a second superconducting resonator of the second quantum memory cell associated with the second quantum information, to a fourth resonance frequency of a second quantum storage cavity of the second quantum memory cell, to transfer second quantum energy corresponding to the second quantum information from the second superconducting resonator to the second quantum storage cavity, and
• after completion of the second write operation, unmatching, by the system, the third resonance frequency of the second superconducting resonator from the fourth resonance frequency of the second quantum storage cavity to prevent transfer of the second quantum energy from the second quantum storage cavity back to the second superconducting resonator;
• wherein the first write operation is independent of the second write operation.

A quantum memory device, comprising:

• a group of respective quantum memory cells, the respective quantum memory cells comprising respective quantum storage cavities coupled to respective superconducting tunable resonator devices,
• wherein, at respective write times, the respective superconducting tunable resonator devices are tuned to respective resonant frequencies of the respective quantum storage cavities to transfer respective quantum bits associated with the respective superconducting tunable resonator devices to the respective quantum storage cavities, and wherein the respective resonant frequencies are different from one another,
• wherein, at respective storage times, the respective superconducting tunable resonator devices are detuned from the respective resonant frequencies of the respective quantum storage cavities to store the respective quantum bits in the respective quantum storage cavities and prevent transfer of the respective quantum bits from the respective quantum storage cavities back to the respective superconducting tunable resonator devices, and
• wherein, at respective read times, the respective superconducting tunable resonator devices are retuned to the respective resonant frequencies of the respective quantum storage cavities to retransfer the respective quantum bits from the respective quantum storage cavities back to the respective superconducting tunable resonator devices.