Plasmonic device and method for manufacturing the same
AssigneePolariton Technologies AG
InventorsClaudia HÖSSBACHER, Eva DE LEO, Wolfgang HENI
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Abstract
In order to manufacture a plasmonic device compatible with standard semiconductor manufacturing steps, the device comprises an FEOL structure having a waveguide-forming layer and a BEOL structure having several horizontal, structured metal layers and several horizontal, structured dielectric layers. The BEOL structure is opened, in a target area of the device. Then, a plasmonic waveguide having a first, metallic structure and a second, dielectric structure is formed in the target area. The plasmonic waveguide is located close to the dielectric waveguide for direct optical coupling.
Claims28
A method for manufacturing a plasmonic device comprising the steps of
- a) manufacturing an FEOL structure comprising a waveguide-forming layer, wherein the waveguide-forming layer is structured to form at least one dielectric waveguide,
- b) manufacturing at least part of a BEOL structure on top of the FEOL structure by depositing and structuring several horizontal metal layers and several horizontal dielectric layers on the FEOL structure,
- c) after the step b), removing, in a target area, the BEOL structure to a distance of no more than 1 mm of the dielectric waveguide,
- d) after the step c), forming, in the target area, a plasmonic waveguide coupled to the dielectric waveguide, with the plasmonic waveguide having a first structure with a permittivity having a negative real part and a second structure with a permittivity having a positive real part.
A plasmonic device comprising
- an FEOL structure comprising a waveguide-forming layer wherein the waveguide-forming layer forms at least a dielectric waveguide,
- a BEOL structure on top of the FEOL structure comprising several horizontal, structured metal layers and several horizontal, structured dielectric layers.
- a plasmonic waveguide coupled to the dielectric waveguide, wherein the plasmonic waveguide is located in a target area, with the plasmonic waveguide having a first structure with a permittivity having a negative real part and a second structure with a permittivity having a positive real part,
- wherein at least part of the metal layers of the BEOL structure are arranged at a level higher than the plasmonic waveguide.
Dependencies are inferred from the claim text.