Sensor device based on gallium oxide and manufacturing method thereof, in particular for gas sensing
AssigneeSTMicroelectronics International N.V.
InventorsDelfo Nunziato SANFILIPPO, Davide Giuseppe PATTI, Nadia LICCIARDELLO
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Abstract
A sensor device includes a substrate made of 4H-SiC polytype silicon carbide having a first electrical conductivity type and a first sensitive region of semiconductor material on a first side of the substrate. A first conductive region is located on and in electrical contact with the first sensitive region. The first sensitive region is made of β-polymorph crystalline gallium oxide (β-Ga2O3) having the first electrical conductivity type.
Claims17
A sensor device, comprising:
- a substrate of 4H-SiC polytype silicon carbide having a first electrical conductivity type;
- a first sensitive region of semiconductor material on a first side of the substrate;
- and
- a first conductive region on and in electrical contact with the first sensitive region;
- wherein the first sensitive region is made of β-polymorph crystalline gallium oxide (β-Ga2O3) having the first electrical conductivity type;
- a second sensitive region on the first side of the substrate that is electrically isolated from the first sensitive region;
- wherein the second sensitive region is made of β-Ga2O3 having the first electrical conductivity type;
- a second conductive region on and in electrical contact with the second sensitive region;
- and
- an insulating layer between the first and the second sensitive regions;
- wherein the insulating layer is made of an insulating material selected from the group consisting of:
- silicon oxide, silicon nitride, TEOS, and undoped β-Ga2O3.
A method for manufacturing a sensor device, comprising the steps of:
- forming, on a first side of a substrate of 4H-SiC polytype silicon carbide, having a first electrical conductivity type, a first sensitive region made of semiconductor material doped with the first electrical conductivity type;
- and
- forming a first conductive region on and in electrical contact with the first sensitive region;
- wherein the step of forming the first sensitive region comprises performing a Metal-Organic Chemical Vapor Deposition (MOCVD) growth process of β-polymorph crystalline gallium oxide (β-Ga2O3) having the first electrical conductivity type.
A sensor device, comprising:
- a substrate of 4H-SiC polytype silicon carbide having a first electrical conductivity type;
- a first sensitive region of semiconductor material on a first side of the substrate;
- a second sensitive region on the first side of the substrate that is electrically isolated from the first sensitive region;
- wherein the first and second sensitive regions are each made of β-polymorph crystalline gallium oxide (β-Ga2O3) having the first electrical conductivity type;
- and
- an insulating layer between the first and the second sensitive regions;
- wherein the insulating layer is made of undoped β-Ga2O3.
Dependencies are inferred from the claim text.