Flux cleaner composition and methods of fabricating a semiconductor structure

A method of making a semiconductor structure, the method comprising:

• applying a flux material to a solder ball on a first bonding pad of a first structure;
• positioning the first structure over a second structure such that the solder ball is over a second bonding pad of the second structure;
• performing a reflow process to transform the solder ball into a solder joint between the first bonding pad of the first structure and the second bonding pad of the second structure;
• and
• cleaning the solder joint with a flux cleaner composition to remove a flux residue remaining from the flux material, wherein the flux cleaner composition comprises:
• water in a range from 80% to 99%;
• an organic nitrogen compound in a range from 0.01% to 3%;
• anionic phosphate surfactant in a range from 0.01% to 3%;
• aprotic ketone solvent in a range from 1% to 20%;
• and
• an azo-coumarin derivative in a range from 0.01% to 5%.

A flux residue cleaning system, comprising:

• an immersion chamber including a container containing a first solution and configured to receive a wafer including a semiconductor structure such that the semiconductor structure is immersed in the first solution, wherein the first solution comprises a flux cleaner composition comprising:
• water in a range from 80% to 99%;
• an organic nitrogen compound in a range from 0.01% to 3%;
• anionic phosphate surfactant in a range from 0.01% to 3%;
• aprotic ketone solvent in a range from 1% to 20%;
• and
• an azo-coumarin derivative in a range from 0.01% to 5%;
• a spraying chamber configured to receive the wafer from the immersion chamber, and including a sprayer configured to spray a second solution onto the semiconductor structure;
• and
• a drying chamber configured to dry the wafer received from the spraying chamber.