Semiconductor device and equipment
AssigneeCanon Kabushiki Kaisha
InventorHIROAKI KOBAYASHI
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Abstract
Embodiments of the present disclosure provide a technique advantageous to an improvement in performance of a semiconductor device. The semiconductor device includes a first monocrystalline semiconductor layer on which a first semiconductor element is arranged, a second monocrystalline semiconductor layer on which a second semiconductor element is arranged, and a thin film transistor electrically connected to the first semiconductor element without an intervention of another semiconductor element arranged on the first monocrystalline semiconductor layer and electrically connected to the second semiconductor element without an intervention of another semiconductor element arranged on the second monocrystalline semiconductor layer.
Claims3
A semiconductor device comprising:
- a monocrystalline semiconductor layer;
- and
- a thin film transistor which includes an oxide semiconductor layer,
- wherein the semiconductor device is configured to have a first circuit and a second circuit connected to the first circuit, the first circuit includes a photodiode in the monocrystalline semiconductor layer, and the second circuit includes the thin film transistor.
A semiconductor device comprising:
- a monocrystalline semiconductor layer;
- a wiring structure arranged on a first side of the monocrystalline semiconductor layer;
- and
- a thin film transistor arranged on a second side of the monocrystalline semiconductor layer.
A semiconductor device comprising:
- a first monocrystalline semiconductor layer;
- a second monocrystalline semiconductor layer;
- and
- a thin film transistor which includes an oxide semiconductor layer,
- wherein the thin film transistor is arranged between the first monocrystalline semiconductor layer and the second monocrystalline semiconductor layer.
Dependencies are inferred from the claim text.