Semiconductor device and methods of formation

A semiconductor structure, comprising:

• a device wafer;
• a capping wafer disposed over the device wafer in a first direction,
• wherein the capping wafer is bonded to the device wafer;
• a first micro-electromechanical-system (MEMS) structure in a first cavity formed by the capping wafer and the device wafer;
• a first bonding structure formed around the first cavity;
• a second MEMS structure in a second cavity formed by the capping wafer and the device wafer;
• and
• a second bonding structure formed around the second cavity,
• wherein a dimension of the first bonding structure in a second direction is greater than a dimension of the second bonding structure in the second direction.

A method, comprising:

• forming a plurality of micro-electromechanical-system (MEMS) structures on a first semiconductor wafer;
• etching a second semiconductor wafer to form a plurality of cavities in the second semiconductor wafer;
• and
• bonding the second semiconductor wafer to the first semiconductor wafer,
• wherein each MEMs structure of the plurality of MEMS structures is in a cavity of the plurality of cavities,
• wherein a first cavity of the plurality of cavities is surrounded by a first bonding structure enclosing the first cavity,
• wherein a second cavity of the plurality of cavities is surrounded by a second bonding structure enclosing the second cavity, and
• wherein a width of one or more portions of the second bonding structure in a direction along a bonding interface between the first semiconductor wafer and the second semiconductor wafer is smaller than a width of the first bonding structure in the direction along the bonding interface.