Method for manufacturing semiconductor device and semiconductor device

A method for manufacturing a semiconductor device, the method comprising:

• forming an electrode on a main surface of a semiconductor substrate having the main surface and a rear surface opposite to the main surface;
• forming a first protective film on the electrode and the semiconductor substrate;
• forming a second protective film on the first protective film;
• patterning a portion of the second protective film formed directly above an exposed portion including a portion of the electrode or a portion of the semiconductor substrate to partially expose a portion of the first protective film formed directly above the exposed portion from the second protective film;
• after the patterning of the second protective film, processing the rear surface of the semiconductor substrate;
• and
• after the processing of the rear surface of the semiconductor substrate, removing the patterned portion of the second protective film together with the portion of the first protective film formed directly above the exposed portion, to expose the exposed portion from the first protective film and the second protective film.