Semiconductor structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsien-Wei Chen, Ming-Fa Chen
Life of this patent
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Abstract
A semiconductor structure including a first semiconductor die and a second semiconductor die is provided. The first semiconductor die includes a first bonding structure. The second semiconductor die is bonded to the first bonding structure of the first semiconductor die. The first bonding structure includes a first dielectric layer, a second dielectric layer covering the first dielectric layer, and first conductors embedded in the first dielectric layer and the second dielectric layer, wherein each of the first conductors includes a first conductive barrier layer covering the first dielectric layer and a first conductive pillar disposed on the first conductive barrier layer, and the first conductive pillars are in contact with the second dielectric layer.
Claims20
A semiconductor structure, comprising:
- a first semiconductor die comprising a first bonding structure, wherein the first bonding structure comprises:
- a first dielectric layer;
- a second dielectric layer covering the first dielectric layer, wherein the second dielectric layer comprises a barrier portion and a dielectric portion, and the barrier portion comprises first barrier liners and a second barrier liner connected to the first barrier liners;
- first conductors embedded in the first dielectric layer and the second dielectric layer, wherein the first barrier liners are between the dielectric portion and sidewalls of the first conductors, and the second barrier liner is between the dielectric portion and the first dielectric layer.
A semiconductor structure, comprising:
- a first semiconductor die comprising a first bonding structure, wherein the first bonding structure comprises:
- a first dielectric layer;
- first conductors penetrating through the first dielectric layer and comprising protruding portions protruding from the first dielectric layer;
- a second dielectric layer disposed on the first dielectric layer and laterally encapsulate the protruding portions, wherein the second dielectric layer comprises a barrier portion and a dielectric portion, the barrier portion is in contact with the first dielectric layer and the protruding portions, and the barrier portion is laterally between the dielectric portion and the protruding portions as well as between the dielectric portion the first dielectric layer;
- and
- a second semiconductor die comprising a second bonding structure, the second bonding structure being bonded to the first bonding structure.
A semiconductor structure, comprising:
- a first semiconductor die comprising a first bonding structure, wherein the first bonding structure comprises:
- a first dielectric layer;
- a second dielectric layer covering the first dielectric layer, wherein the second dielectric layer comprises a barrier portion and a dielectric portion;
- first conductors penetrating through the first dielectric layer and the second dielectric layer, wherein the first conductors are spaced apart from the dielectric portion by the barrier portion;
- and
- seal ring elements penetrating through the first dielectric layer and embedded in the second dielectric layer, wherein the barrier portion extends between the dielectric portion and the seal ring elements, and the seal ring elements are spaced apart from the dielectric portion by the barrier portion;
- and
- a second semiconductor die comprising a second bonding structure, the second bonding structure being bonded to the first bonding structure, wherein the seal ring elements are spaced apart from the second bonding structure by the dielectric portion.
Dependencies are inferred from the claim text.