Highly-effective ultrathin sputter able and tamper-resistant shields with metal-refractory alloy stacks

A semiconductor package, comprising:

• a substrate;
• a semiconductor device disposed on the substrate;
• an interconnect layer electrically connected to the semiconductor device;
• and
• an electromagnetic radiation (EMR) shielding structure disposed on the semiconductor device, the interconnect layer, or some combination thereof configured to shield the semiconductor device from tampering, the EMR shielding structure comprising:
• a first aluminum layer;
• a czt layer;
• and
• a second aluminum layer.

A method of generating a manufacturing plan for a shielding structure, the method comprising:

• receiving, by a computing system, one or more parameters defining shielding effectiveness (SE) of the shielding structure, manufacturing parameters, or some combination thereof;
• determining, by the computing system, two or more materials according to the one or more parameters;
• generating, by the computing system, a model shielding structure comprising the two or more materials and according to the one or more parameters, wherein the model shielding structure comprises two or more layers, wherein adjacent layers comprise different materials of the two or more materials;
• generating, by the computing system, SE data by simulating the operation of a semiconductor device comprising the model shielding structure;
• and
• if the SE data is within the one or more parameters:
• generating, by the computing system, a manufacturing plan for the EMR shielding structure indicating the two or more layers and the two or more materials of the model shielding structure.