Ring structure for interconnect structures and methods of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsPing-Yin Hsieh, Chih-Wei Wu, Ying-Ching Shih
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Abstract
A semiconductor device and methods for forming the same. In some embodiments, the semiconductor device includes a first interconnect structure on a first semiconductor substrate, wherein the first interconnect structure includes a first conductive metal material and a ring structure. The ring structure may extend above the first conductive metal material or surround the first conductive metal material. In some embodiments, the semiconductor device may further include a second conductive metal material and, optionally, a third conductive metal material. The ring structure may partially surround a solder material formed above the first conductive material.
Claims20
A semiconductor device, comprising:
- a first interconnect structure on a first semiconductor substrate, wherein the first interconnect structure comprises a first conductive metal material and a ring structure extending above the first conductive metal material.
A semiconductor device, comprising:
- a first interconnect structure formed overlying a first semiconductor substrate, wherein the first interconnect structure comprises a first conductive metal material and a ring structure, wherein the ring structure surrounds a portion of the first conductive metal material.
A method for forming a semiconductor device, comprising:
- forming a bump above a seed layer;
- forming a ring structure on the bump;
- and
- plating a solder material partially surrounded by the ring structure.
Dependencies are inferred from the claim text.