Electrical fuse having fuse link along sidewall(s) of inactive gate structure

Abstract

An electronic fuse includes an inactive gate structure over a substrate, and a fuse link along at least one sidewall of the inactive gate structure. A first terminal is at a first end of the fuse link, and a second terminal is at a second of the fuse link. The fuse link takes the form of a conductive metal spacer along at least one sidewall of the inactive gate structure and can be formed without a silicide process. Although the e-fuse can be used with any semiconductor device, it is advantageous for use with, for example, III-IV semiconductor devices. The method of making the e-fuse does not require any additional masks and provides a fuse link having a sub-photolithographic width dimension.

Dependencies are inferred from the claim text.