Method for manufacturing semiconductor device using an area selective deposition process
AssigneeSamsung Electronics Co., Ltd.
InventorsSang Hoon AHN, Dong Hyung KIM, Ah Hyun LEE, Jang-Hee LEE, Yong Soon CHOI, Jae Wook HA, Yong Kwan KIM, Hui-Jung KIM
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Abstract
A method for manufacturing a semiconductor device includes forming sacrificial mask patterns on an etching target layer, forming a hard mask pattern between the sacrificial mask patterns; removing the sacrificial mask patterns, wherein an inhibition ratio, indicating a degree to which formation of the hard mask pattern is suppressed on the sidewall of the sacrificial mask patterns, increases as the sidewall extends away from the etching target layer.
Claims20
A method for manufacturing a semiconductor device, the method comprising:
- forming a sacrificial mask layer on an etching target layer;
- patterning the sacrificial mask layer to form sacrificial mask patterns;
- forming a hard mask pattern by selectively depositing hard mask material between the sacrificial mask patterns;
- and
- removing the sacrificial mask patterns,
- wherein an inhibition ratio, indicating a degree to which formation of the hard mask pattern is suppressed on a sidewall of the sacrificial mask patterns, increases as the sidewall extends upward, away from the etching target layer.
A method for manufacturing a semiconductor device, the method comprising:
- forming a sacrificial mask layer on an etching target layer;
- patterning the sacrificial mask layer to form sacrificial mask patterns;
- providing an inhibitor on a surface of the sacrificial mask patterns and an exposed surface of the etching target layer;
- forming a hard mask pattern between the sacrificial mask patterns using an area selective deposition (ASD) process;
- and
- removing the sacrificial mask patterns.
A method for manufacturing a semiconductor device, the method comprising:
- forming sacrificial mask patterns on an etching target layer, the sacrificial mask patterns containing a first element, wherein a concentration of the first element in the sacrificial mask patterns decreases progressively as the sacrificial mask patterns extend upward, away from the etching target layer;
- forming a hard mask pattern by selectively depositing hard mask material between the sacrificial mask patterns;
- and
- removing the sacrificial mask patterns,
- wherein a thickness of an edge portion of the hard mask pattern in contact with the sacrificial mask pattern is greater than a thickness of the central portion of the hard mask pattern.
Dependencies are inferred from the claim text.