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US 2026/0165038 A1Published application
ReRAM WITH INERT CAP LAYER
AssigneesInternational Business Machines Corporation, Tokyo Electron Limited
InventorsKevin Wayne Brew, Takashi Ando, Paul Charles Jamison, Steven P. Consiglio, Kenichi Imakita, Takaaki Tsunomura
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Abstract
A memristor device includes a bottom electrode, an active resistive random-access memory (ReRAM) layer disposed on the bottom electrode and an oxygen reservoir layer disposed on the active ReRAM layer. An inert cap layer is disposed on the oxygen reservoir layer. A top electrode is disposed on the inert cap layer.
Claims20
A memristor device, comprising:
- a bottom electrode;
- an active resistive random-access memory (ReRAM) layer disposed on the bottom electrode;
- an oxygen reservoir layer disposed on the active ReRAM layer;
- an inert cap layer disposed on the oxygen reservoir layer;
- and
- a top electrode disposed on the inert cap layer.
3 more elements
A memristor device, comprising:
- a bottom electrode;
- an active resistive random-access memory (ReRAM) layer disposed on the bottom electrode;
- an oxygen reservoir layer disposed on the active ReRAM layer and including a metal oxide;
- an inert cap layer disposed on the oxygen reservoir layer, wherein the inert cap layer includes a material having a work function above 4.5 eV;
- and
- a top electrode disposed on the inert cap layer.
3 more elements
A method of fabricating a memristor device, comprising:
- forming a bottom electrode;
- depositing an active resistive random-access memory (ReRAM) layer on the bottom electrode;
- depositing an oxygen reservoir layer on the active ReRAM layer;
- depositing an inert cap layer on the oxygen reservoir layer;
- and
- forming a top electrode on the inert cap layer.
3 more elements
Dependencies are inferred from the claim text.