Method for preparing a thin layer of ferroelectric material
OwnerDjamel Belhachemi, Raphaël Caulmilone +2inventors
InventorsDjamel Belhachemi, Raphaël Caulmilone, Isabelle Huyet, Oleg Kononchuk
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Abstract
A method of preparing a thin film of ferroelectric material comprises a step of providing the thin film, the thin film having an exposed free face, and a step of thinning by ion etching, which step is defined by etching parameters. The etching parameters are chosen so that the free face of the thin film has a roughness that does not exceed a threshold value at the end of the thinning step.
Claims21
A method of preparing a thin film of monocrystalline ferroelectric material, the method comprising the following steps:
- a step of providing the thin film, the thin film having an exposed first free face;
- and
- a step of thinning the thin film by ion etching and defined by etching parameters;
- wherein the step of providing comprises assembly of a donor substrate comprising an embrittlement plane with a support substrate and a detachment of the thin film at a level of the embrittlement plane, the thin film having a second face opposite the first free face and placed on the support substrate, and wherein the etching parameters are chosen so that the first free face of the thin film has a roughness that does not exceed a threshold value at the end of the thinning step.
A substrate comprising a thin film of monocrystalline and monodomain ferroelectric material arranged on a support, the thin film having a thickness less than or equal to 700 nm and a thickness uniformity less than or equal to 60 nm.
Dependencies are inferred from the claim text.